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Vishay新型TrenchFET？功率MOSFET实现业内最低导通电阻
功率 实现 低导通电阻
2011/11/4
日前，Vishay Intertechnology, Inc.日前宣布推出新型 20-V 和 30-V p-通道 TrenchFET® 功率 MOSFET --- Si7633DP和Si7135DP。这次推出的器件采用 SO-8 封装，具有 ±20-V 栅源极电压以及业内最低的导通电阻。
存储体单元是静态随机存储器(SRAM)最基本、最重要的组成部分，它在改善系统性能、提高芯片可靠性、降低成本与功耗等方面都起到了积极的作用。该文采用物理→指数MOSFET模型建立了与SRAM存储体单元相关的功耗，延迟的性能模型，并结合存储体单元面积模型以及可靠性分析，提出了一种存储体单元结构优化方法。实验结果表明采用此优化方法得出的存储体单元结构降低了功耗，访问时间以及面积，与仿真结果相比误差小于1...
飞思卡尔半导体推出四组输出集成MOSFET器件MC34700
半导体 集成电路
2011/11/3
随着电子制造商把越来越多的功能封装到更小的器件，空间在电源供给以及系统主板上就显得尤为珍贵。为了帮助开发人员设计紧凑电源，飞思卡尔半导体在其电源管理产品系列中添加了MC34700电源集成电路，这些产品已经对空间受限的高电压和高功率应用进行了优化。
利用R-MOSFET-C器件和CMOS全平衡结构运算放大器设计一个截止频率为500 kHz的四阶巴特沃斯(Butterworth)低通滤波器，该滤波器由工作在线性区的MOS管来做为压控电阻，从而代替一般有源RC滤波器中无源电阻R，通过调节栅极电压大小来改变其等效电阻，达到滤波器截止频率的精确可调.
Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
Submicrometer MOSFET’s Impact ionization Substrate current Temperature Channel length
2010/12/8
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is r...
A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation
MOSFET Velocity saturation Pinch off Conductance Charge
2010/12/8
In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and ...
Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model
Power MOSFET RDs Numerical simulation Physicals parameters
2010/12/8
In this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor ...
On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates
Sensitivity tunneling current n-channel MOSFET
2010/12/9
A theoretical model to evaluate the sensitivity of the tunneling current to the electric field in an n-channel MOSFET with two gates is proposed. This sensitivity is calculated in a real situation.
In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short ...
Accurate Single-Section Model of Mosfet Including Substrate Resistivity
Mosfet Substrate Resistivity
2010/12/16
Practical MOSFETS fabricated on low and moderately doped substrates depart
considerably from the idealized two-port model because of the control properties
of the substrate terminal. Therefore, the ...
By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent circ...
A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region
A Simple Distributed RGC Model MOSFET Pre-Pinch Off Region
2010/12/21
The differential equation describing the small signal behavior of a MOSFET channel is derived. Based on the analogy of the channel to distributed transmission lines, which has been very well establish...