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Four Level Simulation of MOSFET     MOSOFT  channel effect  VGB       2010/12/9
In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short ...
The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ ) and the back surface recombination velocity (S) of silicon solar cells has been investigat...
Simulation results of the electrical performance at 1 GBits/sec of a number of different off-chip interconnection architectures are presented with emphasis given to the dependence of crosstalk and sig...
This paper describes the application of a modern general purpose network analysis programme SPICE2 for the electrothermal analysis of hybrid integrated circuits. Self thermal coupling effects are mode...

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