工学 >>> 电子科学与技术 >>> 电子技术 光电子学与激光技术 半导体技术 电子科学与技术其他学科
搜索结果: 16-30 共查到电子科学与技术 simulation相关记录35条 . 查询时间(0.108 秒)
In this paper, the design and implementation of digital filters for the time-domain simulation of electromagnetic wave interaction with thin material boundaries and thin panels using the Transmission-...
This work aims to find a better forward converter for DC to DC conversion. Simulation of double forward converter in SMPS system is discussed in this paper. A forward converter with RCD snubber to s...
A time-domain numerical model within the framework of transmission line modeling (TLM) is developed to simulate electromagnetic pulse propagation inside multiple microcavities forming photonic crys...
专著信息 书名 SiCGe/SiC Heterojunction and Its MEDICI Simulation of Optoelectronic Characteristics 语种 英文 撰写或编译 作者 吕 政,陈治明,蒲红斌 第一作者单位 出版社 Chinese Physics, 2004年底审稿通过,已录用待发表 出版地 出版日期 2004年 月 日 标准书号 介质类型 页数 字...
In order to use existing and future optical transmission links optimally, multiplexing techniques in the frequency domain (Wavelength-Division Multiplex, WDM) are widely used [1]. The number of channe...
High index contrast integratable optical devices are investigated. Simulations are run on a parallel computer using a wavelet FDTD code. We study the attenuation due to sidewall roughness for straight...
Integrated MOEMS systems are a rapidly growing field with great potential. Accurate simulation of MOEMS systems will allow analysis and optimization of system performance before costly and time-consum...
Photo-generated carriers’ transmission delay of a CMOS-Process-Compatible double photo-diode(DPD)is analyzed by using device simulation in this paper. The carriers’ transmission delay of a DPD in CMOS...
The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation...
CMOS circuits for integrated analog filters at very high frequencies have been designed through PSPICE based on the Transconductance-C integrator. They have been implemented on the bread board and man...
A new circuit which uses FET and bipolar transistor is given. It exhibits Type-S differential negative resistance and a theoretical explanation is appended along with PSPICE simulation.
In this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor ...
The simulation principles of monolithic microwave dynamic transistor negatrons (circuits with negative differential active resistance) are introduced. The non-linear model has been developed on the ba...
A new, completely numerical three-dimensional model of a MOSFET allows a unified treatment of small devices. Preliminary results show that device size effects the surface potential and threshold volta...
This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction ...

中国研究生教育排行榜-

正在加载...

中国学术期刊排行榜-

正在加载...

世界大学科研机构排行榜-

正在加载...

中国大学排行榜-

正在加载...

人 物-

正在加载...

课 件-

正在加载...

视听资料-

正在加载...

研招资料 -

正在加载...

知识要闻-

正在加载...

国际动态-

正在加载...

会议中心-

正在加载...

学术指南-

正在加载...

学术站点-

正在加载...