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Characterization of Defect Traps in SiO2 Thin Films
Gate oxide MOS capacitor C-V characteristics Hysteresis Slow-state traps
2010/12/8
In order to understand the degradation of the electrical operations of metal-oxide-semiconductor (MOS) devices, this work is concerned by the defects generation processes in the non-stoichiometric SiO...
Simulation of the Dynamic Transistor Negatrons
Dynamic transistor negatrons Volterra series Non-linear model Experimental oscillators
2010/12/8
The simulation principles of monolithic microwave dynamic transistor negatrons (circuits with negative differential active resistance) are introduced. The non-linear model has been developed on the ba...
The Li and Co-Substituted Spinel Mn Oxide, (Li)8a[Lix/4Co3x/4Mn2−x]16dO4, and Its Use as Cathode Material in Flat and Flexible Lithium Battery
Flexible Lithium Battery The Li and Co-Substituted Spinel Mn Oxide (Li)8a[Lix/4Co3x/4Mn2− x]16dO4
2010/12/8
The partial substitution of manganese by lithium and cobalt ions in 16d octahedral sites enhances the electrochemical cyclability of LiMn2O4 upon cycling. The improvement in cycling performance is mai...
A New Method for the Extraction of Diode Parameters Using a Single Exponential Model
Diode characteristic junction parameters linear correlation coefficient
2010/12/9
A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (...
Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors
Hot-carrier degradation MOSFET gate geometry
2010/12/9
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of ...
A Brief Study to Clarify Some Aspects Related to Vibrational Density of States for the Far Infrared Range in Amorphous Semiconductors
Phonon density of states amorphous semiconductors far-infrared range
2010/12/10
Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is e...
There is a vast amount of development work proceeding in research establishments of competing semiconductor manufacturers, the aim of which is to discover the ideal electronic memory device. It would ...
A Molecular-Orbital Model for Amorphous Group IV Semiconductors
A Molecular-Orbital Model Amorphous Group IV Semiconductors
2010/12/10
A theoretical model based on standard molecular-orbital theory and extended Hückel approach is proposed. This model is valid for amorphous group IV semiconductors and represents a substantial improvem...
A Mathematical Formulation for Diamagnetism in Tetrahedrally Bonded Semiconductors
A Mathematical Formulation Diamagnetism Tetrahedrally Bonded Semiconductors
2010/12/10
An expression for the magnetic susceptibility tensor corresponding to diamagnetic contribution in tetrahedrally bonded semiconductors is derived; this formulation refers to the crystalline state. In a...
On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
Cluster Calculation Amorphous Tetrahedrally Bonded Semiconductors
2010/12/10
This article consists of an approach to the calculation of the density of valence states in tetrahedrally bonded amorphous semiconductors and, on the other hand, the paper contains theoretical conside...
Magnetic Susceptibility of Tetrahedrally Bonded Amorphous Semiconductors
semiconductors a diamagnetic term a paramagnetic contribution
2010/12/14
A special theoretical formulation on the magnetic susceptibility of tetrahedral amorphous semiconductors is proposed. This formulation is based upon a Wannier representation involving two terms: a dia...
A Brief Note on Coherent Feedback in Semiconductor Lasers
Coherent Feedback Semiconductor Lasers
2010/12/15
Some aspects on coherent feedback in a laser diode are investigated. In particular, weak optical feedback is considered in the context of the feedback-induced frequency shift. In addition, the Lang-Ko...
An Algebraic Model for the Recombination Rate in Semiconductors
the electron-hole recombination rate semiconductors linear algebraic methods
2010/12/16
This paper consists of a new formalism in order to interpret the electron-hole recombination rate in semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts intr...
加载矩形波导中的并矢格林函数及其应用
加载波导 积分变换 并矢格林函数
2009/12/29
本文用镜像法推导出加载矩形波导中的并矢格林函数。在具体计算中,由于应用积分变换以及将多重无穷求和化为单一无穷和,极大地简化了计算,节省了计算时间。作为并矢格林函数应用的例子,给出了位于加载波导宽边上的金属球散射场的矩量解.计算结果与实验和文献的结果吻合很好。这种方法还能推广到其它波导。
Ceramic on Metal Substrates Produced by Plasma Spraying for Thick Film Technology
Ceramic Metal Substrates Plasma Thick Film Technology
2010/12/27
The arc plasma spraying process was applied to obtain ceramic coatings on stainless steel substrates. The outer coatings were formed from pure alumina or alumina + 2 wt. % titania mixture. The nichrom...