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We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). ...
考虑量子化效应的MOSFET栅电容减小模型。
Four Level Simulation of MOSFET     MOSOFT  channel effect  VGB       2010/12/9
In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short ...
By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent circ...
The differential equation describing the small signal behavior of a MOSFET channel is derived. Based on the analogy of the channel to distributed transmission lines, which has been very well establish...

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