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On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates
Sensitivity tunneling current n-channel MOSFET
2010/12/9
A theoretical model to evaluate the sensitivity of the tunneling current to the electric field in an n-channel MOSFET with two gates is proposed. This sensitivity is calculated in a real situation.
The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor
Heterojunction temperature sensors microelectronic devices
2010/12/10
The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well a...