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The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors
Doping InP-Based Double Heterojunction Bipolar Transistors
2009/7/28
High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measure...
Characterization of p-type wide band gap transparent oxide for heterojunction devices
Applied sciences Pure sciences Transparent oxide films Wide band gap semiconductors Transparent oxide Heterojunction devices
2014/11/7
Transparent p-type CuCr1-x Mgx O2 wide band gap oxide semiconductor thin films were deposited over quartz substrates by chemical spray pyrolysis technique using metalloorganic precursors. A mechanism ...
专著信息
书名
SiCGe/SiC Heterojunction and Its MEDICI Simulation of Optoelectronic Characteristics
语种
英文
撰写或编译
作者
吕 政,陈治明,蒲红斌
第一作者单位
出版社
Chinese Physics, 2004年底审稿通过,已录用待发表
出版地
出版日期
2004年
月
日
标准书号
介质类型
页数
字...
MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors
Delta doping Heterojunction bipolar transistor
2010/12/7
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter curr...
Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Thermal Effect Frequency Response Heterojunction Bipolar Power Transistor
2010/12/8
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high cu...
The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor
Heterojunction temperature sensors microelectronic devices
2010/12/10
The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well a...