搜索结果: 16-26 共查到“电子技术 MOSFET”相关记录26条 . 查询时间(0.076 秒)
电子科技大学光电信息学院模拟电路基础课件第四章 MOSFET及其放大电路4.4。
电子科技大学光电信息学院模拟电路基础课件第四章 MOSFET及其放大电路4.3。
电子科技大学光电信息学院模拟电路基础课件第四章 MOSFET及其放大电路4.2。
电子科技大学光电信息学院模拟电路基础课件第四章 MOSFET及其放大电路4.1。
Vishay新型TrenchFET？功率MOSFET实现业内最低导通电阻
功率 实现 低导通电阻
2011/11/4
日前，Vishay Intertechnology, Inc.日前宣布推出新型 20-V 和 30-V p-通道 TrenchFET® 功率 MOSFET --- Si7633DP和Si7135DP。这次推出的器件采用 SO-8 封装，具有 ±20-V 栅源极电压以及业内最低的导通电阻。
飞思卡尔半导体推出四组输出集成MOSFET器件MC34700
半导体 集成电路
2011/11/3
随着电子制造商把越来越多的功能封装到更小的器件，空间在电源供给以及系统主板上就显得尤为珍贵。为了帮助开发人员设计紧凑电源，飞思卡尔半导体在其电源管理产品系列中添加了MC34700电源集成电路，这些产品已经对空间受限的高电压和高功率应用进行了优化。
利用R-MOSFET-C器件和CMOS全平衡结构运算放大器设计一个截止频率为500 kHz的四阶巴特沃斯(Butterworth)低通滤波器，该滤波器由工作在线性区的MOS管来做为压控电阻，从而代替一般有源RC滤波器中无源电阻R，通过调节栅极电压大小来改变其等效电阻，达到滤波器截止频率的精确可调.
Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
Submicrometer MOSFET’s Impact ionization Substrate current Temperature Channel length
2010/12/8
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is r...
Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model
Power MOSFET RDs Numerical simulation Physicals parameters
2010/12/8
In this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor ...
On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates
Sensitivity tunneling current n-channel MOSFET
2010/12/9
A theoretical model to evaluate the sensitivity of the tunneling current to the electric field in an n-channel MOSFET with two gates is proposed. This sensitivity is calculated in a real situation.
Accurate Single-Section Model of Mosfet Including Substrate Resistivity
Mosfet Substrate Resistivity
2010/12/16
Practical MOSFETS fabricated on low and moderately doped substrates depart
considerably from the idealized two-port model because of the control properties
of the substrate terminal. Therefore, the ...